Ukuthuthukiswa kokusebenza okuphezulu, izinzwa zegesi eziphathwayo nezincane kuthola ukunakwa okukhulayo emikhakheni yokuqapha indawo ezungezile, ukuphepha, ukuxilonga ngezokwelapha kanye nezolimo.Phakathi kwamathuluzi okuthola ahlukahlukene, izinzwa zegesi ye-metal-oxide-semiconductor (MOS) ziyinketho edume kakhulu yezinhlelo zokusebenza zentengiso ngenxa yokuqina kwazo okuphezulu, izindleko eziphansi, nokuzwela okuphezulu.Enye yezindlela ezibaluleke kakhulu zokuthuthukisa ukusebenza kwenzwa ukudalwa kwama-heterojunctions asuselwa ku-MOS ananosized (i-hetero-nanostructured MOS) evela ku-MOS nanomaterials.Nokho, indlela yokuzwa yenzwa ye-MOS ene-heteronanostructured ihlukile kuleyo yenzwa eyodwa yegesi ye-MOS, njengoba iyinkimbinkimbi impela.Ukusebenza kwenzwa kuthintwa amapharamitha ahlukahlukene, okuhlanganisa izici ezibonakalayo nezamakhemikhali zezinto ezibucayi (ezifana nosayizi wokusanhlamvu, ukuminyana kokukhubazeka, nezikhala zokwenza umoya-mpilo), izinga lokushisa lokusebenza, nesakhiwo sedivayisi.Lokhu kubuyekezwa kwethula imiqondo eminingana yokuklama izinzwa zegesi ezisebenza kahle ngokuhlaziya indlela yokuzwa yezinzwa ze-MOS ezinama-nanostructured ahlukahlukene.Ngaphezu kwalokho, ithonya lesakhiwo sejometri yedivayisi, enqunywe ubuhlobo phakathi kwezinto ezibucayi kanye ne-electrode esebenzayo, kuxoxwa ngayo.Ukuze ufunde ngokuziphatha kwenzwa ngokuhlelekile, lesi sihloko sethula futhi sidingida indlela evamile yokubonwa kwezakhiwo ezintathu ezijwayelekile zejiyomethri zamadivayisi asekelwe ezintweni ezihlukahlukene ze-heteronanostructured.Lokhu kubuka konke kuzosebenza njengomhlahlandlela wabafundi bakusasa abafunda izindlela ezibucayi zezinzwa zegesi futhi bathuthukise izinzwa zegesi ezisebenza kahle.
Ukungcoliswa komoya kuyinkinga ekhulayo ebucayi kanye nenkinga yemvelo yomhlaba wonke esongela inhlalakahle yabantu nezidalwa eziphilayo.Ukuhogela ukungcola okunegesi kungabangela izinkinga eziningi zempilo ezifana nesifo sokuphefumula, umdlavuza wamaphaphu, i-leukemia ngisho nokufa ngaphambi kwesikhathi1,2,3,4.Kusukela ngo-2012 kuya ku-2016, izigidi zabantu kwabikwa ukuthi zafa ngenxa yokungcoliswa komoya, futhi unyaka ngamunye, izigidigidi zabantu zichayeka emoyeni ongemuhle5.Ngakho-ke, kubalulekile ukuthuthukisa izinzwa zegesi eziphathwayo nezincane ezinganikeza impendulo yesikhathi sangempela kanye nokusebenza kokutholwa okuphezulu (isb., ukuzwela, ukukhetha, ukuzinza, kanye nezikhathi zokuphendula nezokuthola).Ngaphezu kokuqapha imvelo, izinzwa zegesi zidlala indima ebalulekile kwezokuphepha6,7,8, ukuxilongwa kwezokwelapha9,10, i-aquaculture11 neminye imikhakha12.
Kuze kube manje, izinzwa zegesi ezimbalwa eziphathwayo ezisekelwe ezindleleni zokuzwa ezihlukene ziye zethulwa, njenge-optical13,14,15,16,17,18, electrochemical19,20,21,22 kanye nezinzwa eziphikisayo zamakhemikhali23,24.Phakathi kwazo, izinzwa ze-metal-oxide-semiconductor (MOS) eziphikisana namakhemikhali yizona ezidume kakhulu ekusetshenzisweni kwezohwebo ngenxa yokuzinza kwazo okuphezulu kanye nezindleko eziphansi25,26.Ukugxila kokungcola kunganqunywa ngokuthola ushintsho ekuphikisweni kwe-MOS.Ekuqaleni kwawo-1960, izinzwa zegesi ezimelana ne-chemo zokuqala ezisekelwe kumafilimu amancanyana e-ZnO zabikwa, okudala isithakazelo esikhulu emkhakheni wokutholwa kwegesi27,28.Namuhla, ama-MOS amaningi ahlukene asetshenziswa njengezinto ezizwela igesi, futhi angahlukaniswa abe izigaba ezimbili ngokusekelwe ezintweni zawo ezibonakalayo: uhlobo lwe-MOS olunama-electron njengabathwali bezindleko eziningi kanye nohlobo lwe-MOS olunezimbobo njengabathwali abaningi abashajayo.ukushaja abathwali.Ngokuvamile, i-p-type MOS ayidumile kakhulu kune-n-type MOS ngenxa yokuthi impendulo eguquguqukayo yohlobo lwe-p-MOS (Sp) ilingana nempande yesikwele ye-n-type MOS (\(S_p = \sqrt { S_n}\ )) ekucabangeni okufanayo (isibonelo, isakhiwo esifanayo se-morphological kanye noshintsho olufanayo ekugobeni kwamabhande emoyeni) 29,30.Kodwa-ke, izinzwa ze-MOS zesisekelo esisodwa zisabhekene nezinkinga ezifana nomkhawulo onganele wokutholwa, ukuzwela okuphansi nokukhetha ezinhlelweni ezisebenzayo.Izinkinga zokukhetha zingasingathwa ngokwezinga elithile ngokwakha izinhlu zezinzwa (ezibizwa ngokuthi “amakhala e-electronic”) futhi kuhlanganiswe ama-algorithms okuhlaziya okwenziwa ngekhompyutha afana nokuqeqeshwa kwe-vector quantization (LVQ), ukuhlaziya ingxenye eyinhloko (PCA), kanye nokuhlaziywa kwezikwele ezincane (PLS)31 , 32, 33, 34, 35. Ngaphezu kwalokho, ukukhiqizwa kwe-low-dimensional MOS32,36,37,38,39 (isb. one-dimensional (1D), 0D kanye ne-2D nanomaterials), kanye nokusetshenziswa kwamanye ama-nanomaterials ( isb i-MOS40,41,42 , i-noble metal nanoparticles (NPs))43,44, carbon nanomaterials45,46 nama-conductive polymers47,48) ukuze adale ama-nanoscale heterojunctions (okungukuthi, i-heteronanostructured MOS) ezinye izindlela ezithandwayo zokuxazulula izinkinga ezingenhla.Uma kuqhathaniswa namafilimu e-MOS aminyene endabuko, i-MOS enobukhulu obuphansi enendawo ethile ephezulu inganikeza amasayithi asebenzayo okukhangisa kwegesi futhi yenze kube lula ukusakazeka kwegesi36,37,49.Ukwengeza, ukuklanywa kwe-MOS-based heteronanostructures kungaqhubekisela phambili ukuthuthwa kwenkampani yenethiwekhi ku-heterointerface, okuholela ekushintsheni okukhulu kokumelana ngenxa yemisebenzi ehlukene yokusebenza50,51,52.Ukwengeza, eminye imiphumela yamakhemikhali (isb., umsebenzi we-catalytic kanye nokusabela kwe-synergistic surface) okwenzeka ekwakhiweni kwe-MOS heteronanostructures ingabuye ithuthukise ukusebenza kwezinzwa.50,53,54 Nakuba ukuklama nokwakha i-MOS heteronanostructures kungaba indlela ethembisayo yokuthuthukisa. ukusebenza kwenzwa, izinzwa zesimanje ezingamelana ne-chemo ngokuvamile zisebenzisa isilingo nephutha, okudla isikhathi futhi okungasebenzi kahle.Ngakho-ke, kubalulekile ukuqonda indlela yokuzwa yezinzwa zegesi esekelwe ku-MOS njengoba ingaqondisa ukuklanywa kwezinzwa eziqondisa ukusebenza okuphezulu.
Eminyakeni yamuva nje, izinzwa zegesi ye-MOS ziye zathuthuka ngokushesha futhi eminye imibiko ishicilelwe ku-MOS nanostructures55,56,57, izinzwa zegesi lokushisa ekamelweni58,59, izinto ezikhethekile ze-MOS sensor materials60,61,62 kanye nezinzwa zegesi ezikhethekile63.Iphepha lokubuyekeza Kokunye Ukubuyekeza ligxile ekucaciseni indlela yokuzwa yezinzwa zegesi ngokusekelwe ezintweni ezibonakalayo ezibonakalayo namakhemikhali e-MOS, okuhlanganisa indima yezikhala ze-oxygen 64, indima ye-heteronanostructures 55, 65 kanye nokudluliswa kwenkokhelo kuma-heterointerfaces 66. Ngaphezu kwalokho , amanye amapharamitha amaningi athinta ukusebenza kwezinzwa, okuhlanganisa i-heterostructure, usayizi wokusanhlamvu, izinga lokushisa lokusebenza, ukuminyana kwamaphutha, izikhala ze-oxygen, ngisho nezindiza zekristalu ezivulekile zezinto ezibucayi25,67,68,69,70,71.72, 73. Nokho, (okungavamile ukushiwo) isakhiwo sejiyomethri sedivayisi, esinqunywa ubuhlobo phakathi kwezinto zokuzwa kanye ne-electrode esebenzayo, siphinde sithinte kakhulu ukuzwela kwenzwa74,75,76 (bheka isigaba 3 ukuze uthole imininingwane eyengeziwe) .Isibonelo, uKumar et al.I-77 ibike izinzwa ezimbili zegesi ezisuselwe empahleni efanayo (isb, izinzwa zegesi ezinezendlalelo ezimbili ezisekelwe ku-TiO2@NiO kanye ne-NiO@TiO2) futhi yabona izinguquko ezihlukene ekuphikisweni kwegesi kwe-NH3 ngenxa yamajometri edivayisi ehlukene.Ngakho-ke, lapho uhlaziya indlela yokuzwa igesi, kubalulekile ukucabangela ukwakheka kwedivayisi.Kulesi sibuyekezo, ababhali bagxile ezindleleni zokutholwa ezisuselwa ku-MOS zama-nanostructures ahlukahlukene nezakhiwo zedivayisi.Sikholelwa ukuthi lesi sibuyekezo singasebenza njengomhlahlandlela wabafundi abafisa ukuqonda nokuhlaziya izindlela zokutholwa kwegesi futhi kungaba negalelo ekuthuthukisweni kwezinzwa zegesi ezisebenza kahle ezizayo.
Emkhiwaneni.I-1a ibonisa imodeli eyisisekelo yendlela yokuzwa igesi esekelwe ku-MOS eyodwa.Njengoba izinga lokushisa likhuphuka, i-adsorption ye-oxygen (O2) ama-molecule endaweni ye-MOS izoheha ama-electron asuka ku-MOS futhi akhe izinhlobo ze-anionic (ezifana ne-O2- ne-O-).Khona-ke, ungqimba lokuncipha kwe-electron (EDL) lohlobo lwe-MOS noma ungqimba lokuqongelela imbobo (HAL) lohlobo lwe-MOS lube selwakhiwe phezu kwe-MOS 15, 23, 78. Ukusebenzisana phakathi kwe-O2 kanye I-MOS ibangela ibhendi yokuqhuba ye-MOS engaphezulu ukuthi igobele phezulu futhi yakhe umgoqo ongaba khona.Ngokulandelayo, lapho inzwa ibhekene negesi eqondiwe, igesi ekhangisiwe endaweni ye-MOS isabela nezinhlobo ze-ionic oxygen, noma iheha ama-electron (i-oxidizing gas) noma ama-electron anikela (igesi enciphisa).Ukudluliswa kwe-electron phakathi kwegesi okuhlosiwe kanye ne-MOS kungalungisa ububanzi be-EDL noma i-HAL30,81 okuholela ekushintsheni kokumelana okuphelele kwenzwa ye-MOS.Isibonelo, ukuze kuncishiswe igesi, ama-electron azodluliswa esuka kugesi enciphisayo aye ku-n-type MOS, okuholela ku-EDL ephansi kanye nokumelana okuphansi, okubizwa ngokuthi i-n-type sensor behavior.Ngokuphambene, lapho i-MOS yohlobo lwe-p ichayeke kugesi eyehlisayo enquma ukuziphatha kokuzwela kohlobo lwe-p, i-HAL iyashwabana futhi ukumelana kuyanda ngenxa yomnikelo wama-electron.Ngamagesi e-oxidizing, impendulo yenzwa iphambene naleyo yokunciphisa amagesi.
Izindlela eziyisisekelo zokuhlonza zohlobo lwe-n nohlobo lwe-MOS lokunciphisa kanye namagesi oksijidi b Izici ezibalulekile kanye nezakhiwo ze-physico-chemical noma izinto ezibonakalayo ezihilelekile kuzinzwa zegesi ye-semiconductor 89
Ngaphandle kwendlela yokutholwa eyisisekelo, izindlela zokutholwa kwegesi ezisetshenziswa kuzinzwa zegesi ezisebenzayo ziyinkimbinkimbi impela.Isibonelo, ukusetshenziswa kwangempela kwenzwa yegesi kumele kuhlangabezane nezidingo eziningi (njengokuzwela, ukukhetha, nokuzinza) kuye ngezidingo zomsebenzisi.Lezi zidingo zihlobene eduze nezakhiwo zomzimba kanye namakhemikhali wento ebucayi.Isibonelo, u-Xu et al.71 babonise ukuthi izinzwa ezisekelwe ku-SnO2 zithola ukuzwela okuphezulu kakhulu lapho ububanzi bekristalu (d) bulingana noma bungaphansi kokuphindwe kabili kobude be-Debye (λD) be-SnO271.Uma i-d ≤ 2λD, i-SnO2 iphela ngokuphelele ngemva kokukhangiswa kwama-molecule e-O2, futhi impendulo yenzwa kugesi enciphisayo inkulu.Ngaphezu kwalokho, amanye amapharamitha ahlukahlukene angathinta ukusebenza kwezinzwa, okuhlanganisa izinga lokushisa lokusebenza, ukukhubazeka kwekristalu, ngisho nezindiza ezicwebezelayo eziveziwe zezinto zokuzwa.Ikakhulukazi, umthelela wokushisa okusebenzayo uchazwa ukuncintisana okungenzeka phakathi kwamazinga e-adsorption kanye ne-desorption yegesi eqondiwe, kanye nokusebenza kabusha kwendawo phakathi kwama-molecule e-adsorbed gas kanye nezinhlayiya ze-oxygen4,82.Umphumela wokukhubazeka kwekristalu uhlobene kakhulu nokuqukethwe kwezikhala ze-oxygen [83, 84].Ukusebenza kwenzwa kungaphinde kuthinteke ngokusebenza kabusha okuhlukile kobuso bekristalu obuvulekile67,85,86,87.Izindiza zekristalu ezivulekile ezinokuminyana okuphansi ziveza amakheshini ensimbi angaxhumene kakhulu anamandla aphezulu, akhuthaza ukukhangiswa kwendawo kanye nokusebenza kabusha88.Ithebula 1 libala izici ezimbalwa ezibalulekile kanye nezindlela zabo zokucabanga ezithuthukisiwe ezihambisana nazo.Ngakho-ke, ngokulungisa le mingcele yezinto ezibonakalayo, ukusebenza kokutholwa kungathuthukiswa, futhi kubalulekile ukucacisa izici ezibalulekile ezithinta ukusebenza kwezinzwa.
U-Yamazoe89 no-Shimanoe et al.68,71 benza izifundo eziningi ngendlela yethiyori ye-sensor perception futhi bahlongoza izici ezintathu ezibalulekile ezizimele ezithonya ukusebenza kwenzwa, ikakhulukazi umsebenzi we-receptor, umsebenzi we-transducer, kanye nokusetshenziswa (Fig. 1b)..Umsebenzi we-receptor usho ikhono lendawo ye-MOS ukuxhumana nama-molecule egesi.Lo msebenzi uhlobene eduze nezakhiwo zamakhemikhali ze-MOS futhi ungathuthukiswa kakhulu ngokwethula abamukeli bangaphandle (isibonelo, ama-NP ensimbi namanye ama-MOS).Umsebenzi we-transducer usho ikhono lokuguqula ukusabela phakathi kwegesi nendawo ye-MOS ibe isignali kagesi ebuswa imingcele yezinhlamvu ze-MOS.Ngakho-ke, ukusebenza kwezinzwa kuthinteka kakhulu usayizi wezinhlayiyana ze-MOC kanye nokuminyana kwama-receptors angaphandle.U-Katoch et al.90 ubike ukuthi ukuncishiswa kosayizi wokusanhlamvu we-ZnO-SnO2 nanofibrils kubangele ukwakheka kwama-heterojunctions amaningi kanye nokukhula kwenzwa yezinzwa, okuhambisana nokusebenza kwe-transducer.U-Wang et al.91 uqhathanise osayizi abahlukahlukene bokusanhlamvu be-Zn2GeO4 futhi wabonisa ukwanda okuphindwe izikhathi ezingu-6.5 kokuzwela kwenzwa ngemva kokwethula imingcele yokusanhlamvu.I-Utility ingesinye isici esibalulekile sokusebenza kwenzwa echaza ukutholakala kwegesi esakhiweni sangaphakathi se-MOS.Uma ama-molecule egesi engakwazi ukungena futhi asabele nge-MOS yangaphakathi, ukuzwela kwenzwa kuzoncishiswa.Ukuba wusizo kuhlobene eduze nokujula kokusabalalisa kwegesi ethile, okuncike kusayizi wembotshana wempahla yokuzwa.U-Sakai et al.92 ifanise ukuzwela kwenzwa kumagesi agelezayo futhi yathola ukuthi kokubili isisindo semolekyuli yegesi kanye ne-pore radius yolwelwesi lwenzwa kuthinta ukuzwela kwenzwa ekujuleni okuhlukile kokusakazwa kwegesi kulwelwesi lwenzwa.Ingxoxo engenhla ibonisa ukuthi izinzwa zegesi ezisebenza kahle zingathuthukiswa ngokulinganisa nokuthuthukisa umsebenzi wama-receptor, umsebenzi we-transducer, kanye nokusetshenziswa.
Umsebenzi ongenhla ucacisa indlela yokubona eyisisekelo ye-MOS eyodwa futhi udingida izici ezimbalwa ezithinta ukusebenza kwe-MOS.Ngaphezu kwalezi zici, izinzwa zegesi ezisekelwe ku-heterostructures zingathuthukisa ukusebenza kwezinzwa ngokuthuthukisa kakhulu imisebenzi yenzwa neye-receptor.Ngaphezu kwalokho, i-heteronanostructures ingathuthukisa ukusebenza kwezinzwa ngokuthuthukisa ukusabela kwe-catalytic, ukulawula ukudluliswa kwezindleko, nokudala amasayithi amaningi esikhangiso.Kuze kube manje, izinzwa eziningi zegesi ezisekelwe ku-MOS heteronanostructures ziye zacwaningwa ukuze kuxoxwe ngezindlela zokuzwa okuthuthukisiwe95,96,97.Miller et al.55 ifingqa izindlela ezimbalwa ezingase zithuthukise ukuzwela kwe-heteronanostructures, okuhlanganisa okuncike endaweni, okuncike esibonakalayo, kanye nokuncika kwesakhiwo.Phakathi kwazo, indlela yokukhulisa i-interface iyinkimbinkimbi kakhulu ukuthi ingakwazi ukumboza konke ukusebenzisana kwesixhumi esibonakalayo ngethiyori eyodwa, njengoba izinzwa ezihlukahlukene ezisekelwe ezintweni ezine-heteronanostructured (isibonelo, i-nn-heterojunction, pn-heterojunction, pp-heterojunction, njll.) ingasetshenziswa. .Ifindo le-Schottky).Ngokuvamile, izinzwa ze-MOS-based heteronanostructured zihlala zifaka izindlela zezinzwa ezithuthukisiwe ezimbili noma ngaphezulu98,99,100.Umthelela we-synergistic walezi zindlela zokukhulisa amandla ungathuthukisa ukwamukela nokucutshungulwa kwamasignali enzwa.Ngakho-ke, ukuqonda indlela yokubonwa kwezinzwa esekelwe ezintweni ezihlukene ze-nanostructured kubalulekile ukuze usize abacwaningi bathuthukise izinzwa zegesi ezisuka phansi ukuya phezulu ngokuvumelana nezidingo zabo.Ngaphezu kwalokho, ukwakheka kwejiyomethri kwedivayisi nakho kungathinta kakhulu ukuzwela kwenzwa 74, 75, 76. Ukuze kuhlaziywe ngokuhlelekile ukuziphatha kwenzwa, izindlela zokuzwa zezakhiwo ezintathu zedivayisi ezisekelwe ezintweni ezihlukene ze-heteronanostructured zizokwethulwa. futhi kuxoxwe ngezansi.
Ngokuthuthuka okusheshayo kwezinzwa zegesi ezisekelwe ku-MOS, i-MOS ehlukahlukene ene-hetero-nanostructured iye yahlongozwa.Ukudluliswa kwenkokhiso ku-heterointerface kuncike kumazinga ahlukene e-Fermi (Ef) wezingxenye.Ku-heterointerface, ama-electron asuka ohlangothini olulodwa nge-Ef enkulu aye kolunye uhlangothi nge-Ef encane kuze kube yilapho amazinga e-Fermi efinyelela ukulingana, nezimbobo, ngokuphambene nalokho.Khona-ke abathwali ku-heterointerface baphelile futhi benza isendlalelo esiphelile.Uma inzwa isichayeke kugesi eqondiwe, ukugxilwa kwenkampani yenethiwekhi ye-MOS ene-heteronanostructured kuyashintsha, njengoba kwenza ukuphakama komgoqo, ngaleyo ndlela kuthuthukise isignali yokuthola.Ngaphezu kwalokho, izindlela ezihlukene zokwenza ama-heteronanostructures ziholela ebudlelwaneni obuhlukene phakathi kwezinto nama-electrode, okuholela kumajeyometri wedivayisi ahlukene kanye nezindlela zokuzwa ezahlukene.Kulesi sibuyekezo, siphakamisa izakhiwo ezintathu zedivayisi yejometri futhi sixoxe ngendlela yokuzwa yesakhiwo ngasinye.
Nakuba ama-heterojunctions edlala indima ebaluleke kakhulu ekusebenzeni kokutholwa kwegesi, i-geometry yedivayisi yayo yonke inzwa ingase futhi ibe nomthelela omkhulu ekuziphatheni kokutholwa, njengoba indawo yesiteshi sokwenziwa kwenzwa incike kakhulu kujometri yedivayisi.Amajiyometri amathathu ajwayelekile wemishini ye-MOS eyi-heterojunction kuxoxwa ngayo lapha, njengoba kukhonjisiwe kuMfanekiso 2. Ohlotsheni lokuqala, ukuxhumana okubili kwe-MOS kusakazwa ngokungahleliwe phakathi kwama-electrode amabili, futhi indawo yeshaneli yokuqondisa inqunywa iMOS eyinhloko, okwesibili ukwakheka kwama-nanostructures ahlukahlukene avela ku-MOS ehlukene, kuyilapho i-MOS eyodwa kuphela exhunywe ku-electrode.I-electrode ixhunyiwe, khona-ke isiteshi sokuhambisa sivame ukutholakala ngaphakathi kwe-MOS futhi sixhunywe ngokuqondile ku-electrode.Ohlotsheni lwesithathu, izinto ezimbili zixhunywe kuma-electrode amabili ngokuhlukana, ziqondisa idivayisi ngokusebenzisa i-heterojunction eyakhiwe phakathi kwezinto ezimbili.
Ikhonco phakathi kwezinhlanganisela (isb. “SnO2-NiO”) ikhombisa ukuthi izingxenye ezimbili zixubene nje (uhlobo I).Uphawu oluthi “@” phakathi kokuxhumana okubili (isb. “SnO2@NiO”) lubonisa ukuthi impahla ye-scaffold (NiO) ihlotshiswe nge-SnO2 yohlobo lwe-II yenzwa.I-slash (isb. i-“NiO/SnO2”) ikhombisa uhlobo lwe-III idizayini yenzwa .
Kuzinzwa zegesi ezisuselwe kuzinhlanganisela ze-MOS, ama-elementi amabili e-MOS asatshalaliswa ngokungahleliwe phakathi kwama-electrode.Izindlela eziningi zokwenza izinto zenziwe ukuze kulungiswe izinhlanganisela ze-MOS, okuhlanganisa i-sol-gel, i-coprecipitation, i-hydrothermal, i-electrospinning, kanye nezindlela zokuhlanganisa zemishini98,102,103,104.Muva nje, izinhlaka ze-metal-organic (ama-MOF), ikilasi lezinto ezibunjiwe ezibunjiwe zekristalu ezakhiwe izikhungo zensimbi nezixhumi ze-organic, zisetshenziswe njengezifanekiso zokwenziwa kwezinhlanganisela ze-MOS ezinezimbobo105,106,107,108.Kuyaphawuleka ukuthi nakuba iphesenti lezinhlanganisela ze-MOS lifana, izici zokuzwela zingahluka kakhulu uma kusetshenziswa izinqubo zokukhiqiza ezihlukene.109,110 Isibonelo, i-Gao et al.109 yenza izinzwa ezimbili ezisekelwe kuzinhlanganisela ze-MoO3±SnO2 ezinesilinganiso esifanayo se-athomu. ( Mo:Sn = 1:1.9) futhi bathola ukuthi izindlela zokwenziwa ezihlukene ziholela ekuzweleni okuhlukile.Shaposhnik et al.I-110 ibike ukuthi ukusabela kwe-co-precipitated SnO2-TiO2 ku-H2 enegesi kuhluke kulokho kwezinto ezixutshwe ngomshini, ngisho nangesilinganiso esifanayo se-Sn/Ti.Lo mehluko uvela ngoba ubudlelwano phakathi kwe-MOP nosayizi we-crystallite we-MOP buyahlukahluka ngezindlela ezihlukene zokuhlanganisa109,110.Uma usayizi wokusanhlamvu kanye nokuma kuhambisana ngokuvumelana nobuningi bomnikeli kanye nohlobo lwe-semiconductor, impendulo kufanele ihlale ifana uma i-geometry yokuxhumana ingaguquki i-110.Staerz et al.I-111 ibike ukuthi izici zokutholwa ze-SnO2-Cr2O3 core-sheath (CSN) nanofibers kanye nama-CSN aphansi e-SnO2-Cr2O3 ayecishe afane, okuphakamisa ukuthi i-nanofiber morphology ayinikezi nganoma iyiphi inzuzo.
Ngokungeziwe ezindleleni zokwenziwa ezihlukene, izinhlobo ze-semiconductor zama-MOSFET amabili ahlukene nazo zithinta ukuzwela kwenzwa.Ingase iphinde ihlukaniswe ngezigaba ezimbili kuye ngokuthi ama-MOSFET amabili awohlobo olufanayo lwe-semiconductor (i-nn noma i-pp junction) noma izinhlobo ezahlukene (i-pn junction).Uma izinzwa zegesi zisekelwe kuzinhlanganisela ze-MOS zohlobo olufanayo, ngokushintsha isilinganiso se-molar yama-MOS amabili, isici sokusabela kokuzwela sihlala singashintshiwe, futhi ukuzwela kwenzwa kuyahlukahluka kuye ngenani lama-nn- noma i-pp-heterojunctions.Lapho ingxenye eyodwa ibusa kakhulu enkombeni (isb. 0.9 ZnO-0.1 SnO2 noma 0.1 ZnO-0.9 SnO2), umzila wokuqhuba unqunywa i-MOS evelele, ebizwa ngokuthi i-homojunction conduction channel 92 .Uma izilinganiso zezingxenye ezimbili ziqhathaniswa, kucatshangwa ukuthi isiteshi sokuqhuba silawulwa yi-heterojunction98,102.Yamazoe et al.I-112,113 ibike ukuthi isifunda se-heterocontact sezingxenye ezimbili singathuthukisa kakhulu ukuzwela kwenzwa ngoba umgoqo we-heterojunction owakhiwe ngenxa yemisebenzi ehlukene yokusebenza yezingxenye ingalawula ngokuphumelelayo ukuhamba kwe-drift yenzwa evezwe kuma-electron.Amagesi ahlukahlukene azungezile 112,113.Emkhiwaneni.Umfanekiso 3a ubonisa ukuthi izinzwa ezisuselwe kuzakhiwo ze-fibrous hierarchical ze-SnO2-ZnO ezinokuqukethwe okuhlukile kwe-ZnO (kusuka ku-0 kuye ku-10 mol % Zn) zingathola ngokukhetha i-ethanol.Phakathi kwazo, inzwa esekelwe ku-SnO2-ZnO fibers (7 mol.% Zn) ibonise ukuzwela okuphezulu kakhulu ngenxa yokwakhiwa kwenani elikhulu lama-heterojunctions kanye nokwanda kwendawo ethile, okwandisa umsebenzi wokuguqula futhi kuthuthukiswe. ukuzwela 90 Nokho, ngokukhuphuka okwengeziwe kokuqukethwe kwe-ZnO kuya ku-10 mol.%, i-microstructure eyinhlanganisela ye-SnO2-ZnO ingasonga izindawo zokuvula indawo futhi inciphise ukuzwela kwenzwa85.Umkhuba ofanayo ubuye wabonwa ngezinzwa ezisekelwe ku-NiO-NiFe2O4 pp heterojunction composite ezinezilinganiso ezahlukene ze-Fe/Ni (Fig. 3b)114.
Izithombe ze-SEM zezintambo ze-SnO2-ZnO (7 mol.% Zn) kanye nempendulo yezinzwa kumagesi ahlukahlukene ngokuhlushwa kwe-100 ppm ku-260 ° C;Izimpendulo ze-54b zezinzwa ezisekelwe kuzinhlanganisela ezihlanzekile ze-NiO ne-NiO-NiFe2O4 ku-50 ppm yamagesi ahlukahlukene, i-260 ° C;114 ( c) Umdwebo weskimu yenani lamanodi ekwakhiweni kwe-xSnO2-(1-x)Co3O4 kanye nokumelana okuhambisanayo nokusabela kokuzwela kokubunjwa kwe-xSnO2-(1-x)Co3O4 ngo-10 ppm CO, i-acetone, i-C6H6 ne-SO2 igesi ku-350 °C ngokushintsha isilinganiso se-molar ye-Sn/Co 98
Izinhlanganisela ze-pn-MOS zibonisa ukuziphatha okuzwela okuhlukile kuye ngesilinganiso se-athomu se-MOS115.Ngokuvamile, ukuziphatha kwezinzwa kwezinhlanganisela ze-MOS kuncike kakhulu ekutheni i-MOS isebenza njengesiteshi esiyinhloko sokwenziwa kwenzwa.Ngakho-ke, kubaluleke kakhulu ukukhomba ukwakheka kwephesenti kanye ne-nanostructure yezinhlanganisela.UKim et al.98 baqinisekise lesi siphetho ngokuhlanganisa uchungechunge lwama-nanofiber ayinhlanganisela ye-xSnO2 ± (1-x)Co3O4 ngo-electrospinning nokufunda izici zenzwa yazo.Baqaphele ukuthi ukuziphatha kwenzwa eyinhlanganisela ye-SnO2-Co3O4 kushintshile kusuka ku-n-uhlobo kuya kohlobo lwe-p ngokunciphisa iphesenti le-SnO2 (Fig. 3c)98.Ngaphezu kwalokho, izinzwa ezilawulwa yi-heterojunction (ezisekelwe ku-0.5 SnO2-0.5 Co3O4) zibonise amazinga aphezulu okudlulisela e-C6H6 uma kuqhathaniswa nezinzwa ezilawula i-homojunction (isb, izinzwa eziphezulu ze-SnO2 noma ze-Co3O4).Ukumelana okuphezulu kwemvelo kwenzwa esekelwe ku-0.5 SnO2-0.5 Co3O4 kanye nekhono layo elikhulu lokumodela ukumelana nenzwa kunomthelela ekuzweleni kwayo okuphezulu kakhulu ku-C6H6.Ngaphezu kwalokho, ukukhubazeka kwe-lattice okungafani kahle okuvela ku-SnO2-Co3O4 heterointerfaces kungakha amasayithi okukhangisa akhethekile ama-molecule egesi, ngaleyo ndlela kuthuthukise impendulo yezinzwa109,116.
Ngokungeziwe ku-MOS yohlobo lwe-semiconductor, ukuziphatha kokuthinta kwezinhlanganisela ze-MOS nakho kungenziwa ngendlela oyifisayo kusetshenziswa ikhemikhali ye-MOS-117.U-Huo et al.117 basebenzise indlela elula yokubhaka okucwilisiwe ukuze balungiselele izinhlanganisela ze-Co3O4-SnO2 futhi bathola ukuthi ngokwesilinganiso se-Co/Sn molar esingu-10%, inzwa ibonise ukusabela kokutholwa kohlobo lwe-p ku-H2 kanye nokuzwela kohlobo lwe-n H2.impendulo.Izimpendulo zenzwa kumagesi we-CO, H2S kanye ne-NH3 ziboniswa kuMfanekiso 4a117.Ezilinganisweni eziphansi ze-Co/Sn, ama-homojunctions amaningi akha emingceleni ye-SnO2±SnO2 nanograin futhi abonisa izimpendulo zenzwa yohlobo lwe-n ku-H2 (Amakhiwane 4b,c)115.Ngokunyuka kwesilinganiso se-Co/Sn kufika ku-10 mol.%, esikhundleni se-homojunctions ye-SnO2-SnO2, ama-heterojunctions amaningi e-Co3O4-SnO2 akhiwe kanyekanye (Fig. 4d).Njengoba i-Co3O4 ingasebenzi ngokuphathelene ne-H2, futhi i-SnO2 isabela ngokuqinile nge-H2, ukusabela kwe-H2 ngezinhlobo ze-ionic oxygen kwenzeka ikakhulukazi ebusweni be-SnO2117.Ngakho-ke, ama-electron athuthela ku-SnO2 kanye ne-Ef SnO2 ishintshela kubhendi yokuqhuba, kuyilapho i-Ef Co3O4 ihlala ingashintshiwe.Ngenxa yalokho, ukumelana kwenzwa kuyanda, okubonisa ukuthi izinto ezinezinga eliphezulu le-Co / Sn zibonisa ukuziphatha kokuzwa kohlobo lwe-p (Fig. 4e).Ngokuphambene nalokho, amagesi e-CO, i-H2S, ne-NH3 asabela ngezinhlobo ze-oxygen ye-ionic endaweni ye-SnO2 ne-Co3O4, futhi ama-electron asuka kugesi aye ku-sensor, okuholela ekunciphiseni kokuphakama kwesithiyo kanye nokuzwela kohlobo lwe-n (Fig. 4f)..Lokhu kuziphatha kwenzwa okuhlukile kungenxa yokwenziwa kabusha okuhlukile kwe-Co3O4 enamagesi ahlukene, okuphinde kwaqinisekiswa yi-Yin et al.118 .Ngokufanayo, uKatoch et al.119 ibonise ukuthi izinhlanganisela ze-SnO2-ZnO zinokukhetha okuhle nokuzwela okuphezulu ku-H2.Lokhu kuziphatha kwenzeka ngoba ama-athomu angu-H angakhangiswa kalula ezindaweni ze-O ze-ZnO ngenxa yokuhlanganisa okuqinile phakathi kwe-s-orbital ka-H kanye ne-p-orbital ye-O, okuholela ekufakweni kwensimbi kwe-ZnO120,121.
ijika elinamandla le-Co/Sn-10% lokunciphisa amagesi afana ne-H2, CO, NH3 ne-H2S, b, c, umdwebo we-Co3O4/SnO2 oyinhlanganisela yenzwa ye-H2 ephansi ngo-% m.I-Co/Sn, i-df Co3O4 Mechanism yokuthola i-H2 ne-CO, i-H2S ne-NH3 enenhlanganisela ephezulu ye-Co/Sn/SnO2
Ngakho-ke, singathuthukisa ukuzwela kwenzwa yohlobo lwe-I ngokukhetha izindlela zokwenziwa ezifanele, sinciphise usayizi wokusanhlamvu wezinhlanganisela, nokuthuthukisa isilinganiso se-molar yezinhlanganisela ze-MOS.Ngaphezu kwalokho, ukuqonda okujulile kwekhemistri yezinto ezibucayi kungathuthukisa ukukhethwa kwenzwa.
Izinhlaka zezinzwa zohlobo lwe-II zingesinye isakhiwo sezinzwa esidumile esingasebenzisa izinhlobonhlobo zezinto ezinokwakheka kwe-nanostructured, okuhlanganisa "i-master" nanomaterial eyodwa kanye ne-nanomaterial yesibili noma yesithathu.Isibonelo, izinto ezinohlangothi olulodwa noma ezimbili ezihlotshiswe ngama-nanoparticles, i-core-shell (CS) kanye ne-multilayer heteronanostructured materials zivame ukusetshenziswa ezinhlakeni zezinzwa zohlobo lwe-II futhi zizoxoxwa ngokuningiliziwe ngezansi.
Okokusebenza kokuqala kwe-heteronanostructure (i-heteronanostructure ehlotshisiwe), njengoba kuboniswe ku-Fig. 2b (1), iziteshi eziqhutshwayo zenzwa zixhunywe ngento eyisisekelo.Ngenxa yokwakhiwa kwama-heterojunctions, ama-nanoparticles aguquliwe anganikeza amasayithi asebenzayo kakhulu we-gas adsorption noma i-desorption, futhi angenza njengama-catalysts ukuthuthukisa ukusebenza kwezinzwa109,122,123,124.U-Yuan et al.41 baphawule ukuthi ukuhlobisa ama-nanowires angu-WO3 nge-CeO2 nanodots kunganikeza amasayithi esikhangiso engeziwe ku-CeO2@WO3 heterointerface kanye ne-CeO2 surface futhi kukhiqize izinhlobo eziningi ze-oksijini ye-chemisorbed ukuze kutholakale i-acetone.UGunawan et al.125. Inzwa ye-acetone yokuzwela ephezulu kakhulu esekelwe ku-One-dimensional Au@α-Fe2O3 iye yahlongozwa futhi kuye kwaphawulwa ukuthi ukuzwela kwenzwa kulawulwa ukusebenza kwama-molecule e-O2 njengomthombo we-oxygen.Ukuba khona kwama-Au NPs kungasebenza njenge-catalyst ekhuthaza ukuhlukaniswa kwama-molecule e-oksijini ku-oksijini ye-lattice ye-oxidation ye-acetone.Imiphumela efanayo yatholwa ngu-Choi et al.9 lapho i-Pt catalyst yasetshenziselwa ukuhlukanisa ama-molecule e-oksijini e-adsorbed abe yizinhlobo zomoya-mpilo we-ionized futhi kuthuthukise ukusabela okubucayi ku-acetone.Ngo-2017, ithimba elifanayo locwaningo libonise ukuthi ama-nanoparticles e-bimetallic asebenza kahle kakhulu ku-catalysis kunama-nanoparticles ensimbi eyodwa ehloniphekile, njengoba kuboniswe kuMfanekiso 5126. usayizi omaphakathi ongaphansi kuka-3 nm.Khona-ke, kusetshenziswa indlela ye-electrospinning, i-PtM@WO3 nanofibers yatholwa ukwandisa ukuzwela nokukhetha ku-acetone noma i-H2S (Fig. 5b-g).Muva nje, ama-catalysts e-athomu eyodwa (ama-SAC) abonise ukusebenza okuhle kakhulu kwe-catalytic emkhakheni we-catalysis nokuhlaziywa kwegesi ngenxa yokusebenza kahle okukhulu kokusetshenziswa kwama-athomu kanye nezakhiwo zikagesi ezishuniwe127,128.Shin et al.I-129 isebenzise i-Pt-SA anchored carbon nitride (MCN), i-SnCl2 ne-PVP nanosheets njengemithombo yamakhemikhali ukuze kulungiswe i-Pt@MCN@SnO2 imicu yomugqa ukuze kutholwe igesi.Ngaphandle kokuqukethwe okuphansi kakhulu kwe-Pt@MCN (kusuka ku-0.13 wt.% ukuya ku-0.68 wt.%), ukusebenza kokutholwa kwe-gaseous formaldehyde Pt@MCN@SnO2 kuphakeme kunamanye amasampula ayireferensi (pure SnO2, MCN@SnO2 kanye ne-Pt NPs@ SnO2)..Lokhu kusebenza okuhle kakhulu kokutholwa kungabangelwa ukusebenza kahle okuphezulu kwe-athomu kwe-Pt SA catalyst kanye nokufakwa okuncane kwamasayithi asebenzayo e-SnO2129.
Indlela ye-encapsulation elayishwe i-Apoferritin ukuthola i-PtM-apo (PtPd, PtRh, PtNi) nanoparticles;izakhiwo ezizwelayo zegesi ye-bd pristine WO3, PtPd@WO3, PtRn@WO3, kanye ne-Pt-NiO@WO3 nanofibers;okusekelwe, isibonelo, kuzakhiwo zokukhetha ze-PtPd@WO3, PtRn@WO3 kanye ne-Pt-NiO@WO3 yezinzwa ze-nanofiber ukuya ku-1 ppm wegesi ephazamisayo 126
Ukwengeza, ama-heterojunctions akhiwe phakathi kwezinto ze-scaffold kanye nama-nanoparticles angakwazi futhi ukuguqula ngokuphumelelayo iziteshi zokuqhuba ngokusebenzisa indlela yokuguqula i-radial ukuze kuthuthukiswe ukusebenza kwezinzwa130,131,132.Emkhiwaneni.Umfanekiso 6a ubonisa izici zezinzwa ze-SnO2 ehlanzekile kanye ne-Cr2O3@SnO2 nanowires yokunciphisa kanye namagesi e-oxidizing kanye nezindlela zezinzwa ezihambisanayo131.Uma kuqhathaniswa nama-nanowires ahlanzekile we-SnO2, impendulo ye-Cr2O3@SnO2 nanowires ekwehliseni amagesi ithuthukiswa kakhulu, kuyilapho ukusabela kumagesi e-oxidizing kuba kubi kakhulu.Lezi zenzakalo zihlobene eduze nokwehliswa kwasendaweni kweziteshi zokuqhuba ze-SnO2 nanowires ekuqondeni kwe-radial kwe-pn heterojunction eyenziwe.Ukumelana nezinzwa kungashunwa kalula ngokushintsha ububanzi be-EDL ebusweni bama-nanowires ahlanzekile e-SnO2 ngemva kokuchayeka kumagesi anciphisa nawoku-oxidizing.Kodwa-ke, kuma-nanowires e-Cr2O3@SnO2, i-DEL yokuqala ye-SnO2 nanowires emoyeni iyanyuswa uma iqhathaniswa nama-nanowires ahlanzekile e-SnO2, futhi isiteshi sokuqhuba siyacindezelwa ngenxa yokwakheka kwe-heterojunction.Ngakho-ke, lapho inzwa ivezwa igesi elinciphisa, ama-electron abanjwe akhululwa ku-SnO2 nanowires futhi i-EDL iyancipha kakhulu, okuholela ekuzweleni okuphezulu kune-SnO2 nanowires ehlanzekile.Ngokuphambene, lapho ushintshela kugesi oxidizing, ukunwetshwa kwe-DEL kukhawulelwe, okuholela ekuzweleni okuphansi.Imiphumela efanayo yokusabela yezinzwa yabonwa ngu-Choi et al., 133 lapho ama-SnO2 nanowires ahlotshiswe nge-p-uhlobo lwe-WO3 nanoparticles abonise impendulo ethuthukisiwe kakhulu yezinzwa ekunciphiseni amagesi, kuyilapho izinzwa ze-SnO2 ezihlotshiswe yi-n-zithuthukise ukuzwela kwamagesi oxidizing.I-TiO2 nanoparticles (Fig. 6b) 133. Lo mphumela ubangelwa ikakhulukazi imisebenzi ehlukene ye-SnO2 ne-MOS (TiO2 noma i-WO3) nanoparticles.Ku-p-type (n-type) nanoparticles, umzila wokuqhuba we-framework material (SnO2) inweba (noma izinkontileka) endaweni ye-radial, bese, ngaphansi kwesenzo sokunciphisa (noma i-oxidation), ukunwetshwa okuqhubekayo (noma ukufinyeza) wesiteshi sokuqhuba se-SnO2 - ubambo) wegesi (Fig. 6b).
Indlela yokushintshashintsha kwemisebe eyenziwe i-LF MOS eguquliwe.Isifinyezo sezimpendulo zegesi ku-10 ppm amagesi okunciphisa kanye ne-oxidizing asekelwe ku-SnO2 ehlanzekile kanye ne-Cr2O3@SnO2 nanowires kanye nemidwebo ehambisanayo yesistimu yezinzwa;kanye nezikimu ezihambisanayo ze-WO3@SnO2 nanorods kanye nendlela yokuthola133
Kumadivayisi we-bilayer kanye ne-multilayer heterostructure, isiteshi sokuqhuba sedivayisi sibuswa ungqimba (imvamisa ungqimba olungezansi) ngokuthintana okuqondile nama-electrode, futhi i-heterojunction eyakhiwe ekuxhumaneni kwezingqimba ezimbili ingalawula ukuqhutshwa kwesendlalelo esingezansi. .Ngakho-ke, lapho amagesi ehlangana nesendlalelo esiphezulu, angathinta kakhulu iziteshi zokuqhuba ungqimba olungezansi kanye nokumelana 134 kwedivayisi.Isibonelo, uKumar et al.I-77 ibike ukuziphatha okuphambene kwe-TiO2@NiO kanye ne-NiO@TiO2 izendlalelo eziphindwe kabili ze-NH3.Lo mehluko uvela ngenxa yokuthi iziteshi zokuqhuba zezinzwa ezimbili zibusa ezingqimbeni zezinto ezihlukene (i-NiO ne-TiO2, ngokulandelana), bese ukuhlukahluka kweziteshi zokuqhuba ezingaphansi kuhlukile77.
I-Bilayer noma i-multilayer heteronanostructures ivamise ukukhiqizwa ngokufaka i-sputtering, i-atomic layer deposition (ALD) kanye ne-centrifugation56,70,134,135,136.Ubukhulu befilimu kanye nendawo yokuxhumana yezinto ezimbili zingalawulwa kahle.Izibalo 7a kanye no-b zibonisa i-NiO@SnO2 kanye ne-Ga2O3@WO3 nanofilms etholwe ngokufafaza ukuze kutholwe i-ethanol135,137.Kodwa-ke, lezi zindlela ngokuvamile zikhiqiza amafilimu ayisicaba, futhi lawa mafilimu ayisicaba azwela kancane kunezinto ze-3D nanostructured ngenxa yendawo yazo ephansi ethile kanye nokungena kwegesi.Ngakho-ke, isu lesigaba se-liquid lokwakha amafilimu e-bilayer anezigaba ezihlukene nalo liye lahlongozwa ukuze kuthuthukiswe ukusebenza kombono ngokwandisa indawo ethile41,52,138.I-Zhu et al139 ihlanganise amasu oku-sputtering kanye ne-hydrothermal ukuze kukhiqizwe ama-ZnO nanowires a-ode kakhulu ngama-nanowires e-SnO2 (ZnO@SnO2 nanowires) ukuze kutholwe i-H2S (Fig. 7c).Impendulo yayo ku-1 ppm H2S iphakeme izikhathi ezingu-1.6 kunaleyo yenzwa esekelwe ku-nanofilms e-sputtered ZnO@SnO2.Liu et al.I-52 ibike ukusebenza okuphezulu kwenzwa ye-H2S isebenzisa indlela yokubeka amakhemikhali ezinyathelo ezimbili ku-situ ukuze kwenziwe i-hierarchical SnO2@NiO nanostructures elandelwa i-thermal annealing (Fig. 10d).Uma kuqhathaniswa namafilimu ajwayelekile e-SnO2@NiO bilayer ashayiwe, ukusebenza kokuzwela kwesakhiwo se-bilayer se-SnO2@NiO kuthuthukiswa kakhulu ngenxa yokwanda kwendawo ethile52,137.
Inzwa yegesi enezingqimba ezimbili esekelwe ku-MOS.I-NiO@SnO2 nanofilm yokuthola i-ethanol;137b Ga2O3@WO3 nanofilm yokuthola i-ethanol;I-135c e-odwe kakhulu nge-SnO2@ZnO bilayer isakhiwo se-hierarchical ukuze kutholwe i-H2S;I-139d SnO2@NiO bilayer isakhiwo se-hierarchical sokuthola i-H2S52.
Kumadivayisi ohlobo lwe-II olusekelwe ku-core-shell heteronanostructures (CSHNs), indlela yokuzwa iyinkimbinkimbi kakhulu, njengoba iziteshi zokuqhuba azikhawulelwe kugobolondo elingaphakathi.Kokubili umzila wokukhiqiza kanye nobukhulu (hs) bephakheji kunganquma indawo yamashaneli e-conductive.Isibonelo, uma usebenzisa izindlela zokuhlanganisa ezisuka phezulu ziye phezulu, iziteshi zokuqhuba ngokuvamile zikhawulelwe kumongo wangaphakathi, ofana ngesakhiwo nezakhiwo zedivayisi ezinezendlalelo ezimbili noma eziningi (Fig. 2b(3)) 123, 140, 141, 142, 143. Xu et al.I-144 ibike indlela eya phansi ekutholeni i-CSHN NiO@α-Fe2O3 kanye ne-CuO@α-Fe2O3 ngokufaka ungqimba lwe-NiO noma i-CuO NPs ku-α-Fe2O3 nanorods lapho isiteshi sokuqhuba sasikhawulelwe ingxenye emaphakathi.(ama-nanorods α-Fe2O3).Liu et al.142 futhi iphumelele ukukhawulela isiteshi sokuqhuba engxenyeni eyinhloko ye-CSHN TiO2 @ Si ngokufaka i-TiO2 kuhlu olulungisiwe lwama-silicon nanowires.Ngakho-ke, ukuziphatha kwayo kokuzwa (uhlobo lwe-p noma uhlobo lwe-n) kuncike kuphela ohlotsheni lwe-semiconductor ye-silicon nanowire.
Kodwa-ke, izinzwa eziningi ezisekelwe ku-CSHN ezibikiwe (I-Fig. 2b(4)) zakhiwe ngokudlulisela izimpushana zezinto ezihlanganisiwe ze-CS kuma-chips.Kulesi simo, indlela yokuqhuba inzwa ithinteka ngobuningi bezindlu (hs).Iqembu likaKim liphenye umthelela we-hs ekusebenzeni kokutholwa kwegesi futhi laphakamisa indlela yokuthola okungenzeka100,112,145,146,147,148. Kukholelwa ukuthi izici ezimbili zinomthelela endleleni yokuzwa yalesi sakhiwo: (1) i-radial modulation ye-EDL yegobolondo kanye (2) nomphumela wokugcoba insimu kagesi (Fig. 8) 145. Abacwaningi basho ukuthi isiteshi sokuqhuba yabathwali iningi labo livalelwe ungqimba lwegobolondo lapho hs > λD yongqimba lwegobolondo145. Kukholelwa ukuthi izici ezimbili zinomthelela endleleni yokuzwa yalesi sakhiwo: (1) i-radial modulation ye-EDL yegobolondo kanye (2) nomphumela wokugcoba insimu kagesi (Fig. 8) 145. Abacwaningi basho ukuthi isiteshi sokuqhuba yabathwali iningi labo livalelwe ungqimba lwegobolondo lapho hs > λD yongqimba lwegobolondo145. Считается, что в механизме восприятия этой структуры участвуют два фактора: (1) радиальная модуляция ДЭС оболочки и (2) эффект размытия электрического поля (рис. 8) 145. Исследователи отметили, что канал проводимости носителей в основном приурочено к оболочке, когда hs > λD оболочки145. Kukholelwa ukuthi izici ezimbili zihilelekile endleleni yokubona lesi sakhiwo: (1) i-radial modulation ye-EDL yegobolondo kanye (2) nomphumela wokufiphaza insimu kagesi (Fig. 8) 145. Abacwaningi baphawule ukuthi isiteshi sokuphatha senkampani yenethiwekhi sivalelwa ikakhulukazi kugobolondo lapho hs > λD amagobolondo145.Kukholelwa ukuthi izici ezimbili zinomthelela endleleni yokuthola yalesi sakhiwo: (1) i-radial modulation ye-DEL yegobolondo kanye (2) nomphumela wokugcoba insimu kagesi (Fig. 8) 145.研究人员提到传导通道当壳层的hs > λD145 时，载流子的数量主要局限于壳层。 > λD145 时，载流子的数量主要局限于壳层. Исследователи отметили, что канал проводимости Когда hs > λD145 оболочки, количество носителей в основном ограничено оболочкой. Abacwaningi baqaphele ukuthi isiteshi sokuqhuba Uma hs > λD145 wegobolondo, inani labathwali linqunyelwe ikakhulukazi igobolondo.Ngakho-ke, ekuguquleni okuphikisayo kwenzwa okusekelwe ku-CSHN, ukuguqulwa kwe-radial ye-cladding DEL kuyanqoba (Fig. 8a).Kodwa-ke, ngo-hs ≤ λD wegobolondo, izinhlayiya ze-oksijini ezikhangiswa igobolondo kanye ne-heterojunction eyakhiwe ku-CS heterojunction aphelelwe ngokuphelele ama-electron. Ngakho-ke, isiteshi sokuqhuba asitholakali kuphela ngaphakathi kwesendlalelo segobolondo kodwa futhi ingxenye engxenyeni eyinhloko, ikakhulukazi uma hs < λD wesendlalelo segobolondo. Ngakho-ke, isiteshi sokuqhuba asitholakali kuphela ngaphakathi kwesendlalelo segobolondo kodwa futhi ingxenye engxenyeni eyinhloko, ikakhulukazi uma hs < λD wesendlalelo segobolondo. Поэтому канал проводимости располагается не только внутри оболочечного слоя, но и частично в сердцевинной части, особенной причечного приговодите, особенное приговодите. Ngakho-ke, isiteshi sokuqhuba asitholakali kuphela ngaphakathi kwesendlalelo segobolondo, kodwa futhi ingxenye engxenyeni eyinhloko, ikakhulukazi ku-hs < λD yongqimba lwegobolondo.因此，传导通道不仅位于壳层内部，而且部分位于芯部，尤其是当壳层的hs < λD 时. hs < λD 时. Поэтому канал проводимости располагается не только внутри оболочки, но частично в сердцевине, особенно при hs < λD оболочки. Ngakho-ke, isiteshi sokuqhuba asitholakali kuphela ngaphakathi kwegobolondo, kodwa futhi ingxenye engaphakathi, ikakhulukazi ku-hs < λD yegobolondo.Kulokhu, kokubili igobolondo le-electron eliqedwe ngokugcwele kanye nongqimba oluyisisekelo oluncishwe kancane lusiza ukulungisa ukumelana kwayo yonke i-CSHN, okuholela kumphumela womsila wensimu kagesi (Fig. 8b).Ezinye izifundo zisebenzise umqondo wengxenye yevolumu ye-EDL esikhundleni somsila wensimu kagesi ukuhlaziya umphumela we-hs100,148.Uma kubhekwa le minikelo emibili, ukuguquguquka okuphelele kokumelana kwe-CSHN kufinyelela inani lakhona elikhulu lapho u-hs eqhathaniswa ne-sheath λD, njengoba kuboniswe ku-Fig. 8c.Ngakho-ke, ama-hs alungile we-CSHN angasondela kugobolondo elithi λD, elihambisana nokubonwa kokuhlola99,144,145,146,149.Ucwaningo oluningana lubonise ukuthi ama-hs angaphinde athinte ukuzwela kwe-CSHN-based pn-heterojunction sensors40,148.Li et al.148 kanye no-Bai et al.40 iphenye ngokuhlelekile umthelela we-hs ekusebenzeni kwezinzwa ze-pn-heterojunction CSHN, ezifana ne-TiO2@CuO ne-ZnO@NiO, ngokushintsha umjikelezo we-ALD wokuvala.Ngenxa yalokho, ukuziphatha kwezinzwa kushintshile kusuka kuhlobo lwe-p kuya kohlobo lwe-n ngokukhula kwe-hs40,148.Lokhu kuziphatha kungenxa yokuthi ekuqaleni (ngenani elilinganiselwe lemijikelezo ye-ALD) ama-heterostructures angabhekwa njengama-heteronanostructures aguquliwe.Ngakho, isiteshi sokuqhuba sinqunyelwe isendlalelo esiyinhloko (i-p-type MOSFET), futhi inzwa ibonisa ukuziphatha kokutholwa kohlobo lwe-p.Njengoba inani lemijikelezo ye-ALD likhula, isendlalelo sokuvala (i-n-type MOSFET) siba ngokuqhubekayo futhi sisebenza njengesiteshi sokuqhuba, okuholela ekuzweleni kohlobo lwe-n.Ukuziphatha okufanayo kokuguquka kwezinzwa kuye kwabikwa ku-pn branched heteronanostructures 150,151.UZhou et al.150 iphenye ukuzwela kwe-Zn2SnO4@Mn3O4 i-heteronanostructures enamagatsha ngokulawula okuqukethwe kwe-Zn2SnO4 ebusweni be-Mn3O4 nanowires.Lapho ama-nuclei e-Zn2SnO4 akheka endaweni ye-Mn3O4, ukuzwela kohlobo lwe-p kwabonwa.Ngokukhuphuka okwengeziwe kokuqukethwe kwe-Zn2SnO4, inzwa esekelwe ku-branched Zn2SnO4@Mn3O4 heteronanostructures ishintshela ekuziphatheni kwenzwa yohlobo lwe-n.
Incazelo yomqondo yendlela yezinzwa esebenza kabili ye-CS nanowires iyaboniswa.ukuguquguquka kokumelana ngenxa yokuguqulwa kweradial kwamagobolondo aphelelwe amandla e-electron, b Umthelela omubi wokugcoba ekushintshashintsheni kokumelana, kanye c Nokuguqulwa kwengqikithi yokumelana kwe-CS nanowires ngenxa yenhlanganisela yayo yomibili imiphumela 40
Sengiphetha, izinzwa zohlobo lwe-II zihlanganisa ama-nanostructures amaningi ahlukene e-hierarchical, futhi ukusebenza kwezinzwa kuncike kakhulu ekuhlelweni kwamashaneli okuqhuba.Ngakho-ke, kubalulekile ukulawula isikhundla sesiteshi sokuqhuba senzwa futhi usebenzise imodeli ye-MOS efanelekile ye-heteronanostructured ukuze ufunde indlela yokuzwa eyandisiwe yezinzwa zohlobo lwe-II.
Izakhiwo zezinzwa zohlobo lwe-III azivamile kakhulu, futhi isiteshi sokuqhuba sisekelwe ku-heterojunction eyakhiwe phakathi kwama-semiconductors amabili axhunywe kuma-electrode amabili, ngokulandelana.Izakhiwo zedivayisi ezihlukile zivame ukutholwa ngamasu e-micromachining futhi izindlela zazo zokuzwa zihluke kakhulu kunezakhiwo zezinzwa ezimbili zangaphambilini.Ijika le-IV lenzwa yohlobo lwe-III ngokuvamile libonisa izici ezijwayelekile zokulungisa ngenxa yokwakheka kwe-heterojunction48,152,153.Ijika lesici le-I–V le-heterojunction ekahle lingachazwa ngomshini we-thermionic wokukhishwa kwama-electron ngaphezu kokuphakama komgoqo we-heterojunction152,154,155.
lapho i-Va iyi-voltage echemile, A indawo yedivayisi, k iyi-Boltzmann engaguquki, T iyizinga lokushisa eliphelele, q inkokhiso yenkampani yenethiwekhi, i-Jn ne-Jp iyimbobo kanye nokuminyana kwamanje kwe-electron, ngokulandelana.I-IS imele i-reverse saturation current, echazwa ngokuthi: 152,154,155
Ngakho-ke, inani lamanje le-pn heterojunction lincike ekushintsheni ekugxilweni kwabathwali bezindleko kanye noshintsho ekuphakameni komgoqo we-heterojunction, njengoba kuboniswe kuzibalo (3) kanye (4) 156
lapho i-nn0 kanye no-pp0 kungukuhlangana kwama-electron (izimbobo) ku-n-type (p-type) MOS, \(V_{bi}^0\) amandla akhelwe ngaphakathi, i-Dp (Dn) iyi-coefficient yokusabalalisa ama-electron (izimbobo), i-Ln (Lp) ubude bokusabalalisa bama-electron (izimbobo), i-ΔEv (ΔEc) iwukushintsha kwamandla ebhendi ye-valence (ibhendi yokuqhuba) ku-heterojunction.Nakuba ukuminyana kwamanje kuhambisana nokuminyana kwenkampani yenethiwekhi, kuqhathaniswa ngokuphambene kakhulu ne-\(V_{bi}^0\).Ngakho-ke, ukuguqulwa okuphelele kokuminyana kwamanje kuncike kakhulu ekuguquguqukeni kokuphakama kwesithiyo se-heterojunction.
Njengoba kushiwo ngenhla, ukudalwa kwe-MOSFETs ye-hetero-nanostructured (isibonelo, uhlobo lwe-I kanye nohlobo lwamadivayisi we-II) kungathuthukisa kakhulu ukusebenza kwenzwa, kunokuba izingxenye zomuntu ngamunye.Futhi kumadivayisi ohlobo lwe-III, impendulo ye-heteronanostructure ingaba phezulu kunezingxenye ezimbili48,153 noma ngaphezulu kunengxenye eyodwa76, kuye ngokwakhiwa kwamakhemikhali wento.Imibiko eminingana ibonise ukuthi impendulo ye-heteronanostructures iphakeme kakhulu kunaleyo yengxenye eyodwa lapho enye yezingxenye ingenandaba negesi ehlosiwe48,75,76,153.Kulesi simo, igesi eqondiwe izosebenzisana kuphela nesendlalelo esibucayi futhi ibangele ukushintsha kwe-Ef yesendlalelo esibucayi kanye noshintsho ekuphakameni komgoqo we-heterojunction.Khona-ke inani lamanje ledivayisi lizoshintsha kakhulu, njengoba lihlobene ngokuphambene nokuphakama komgoqo we-heterojunction ngokusho kwe-equation.(3) kanye (4) 48,76,153.Kodwa-ke, uma izingxenye zombili zohlobo lwe-n nohlobo lwe-p zizwela igesi eqondiwe, ukusebenza kokutholwa kungase kube ndawana thize phakathi.U-José et al.76 ukhiqize inzwa ye-NiO/SnO2 yefilimu engu-NO2 enezimbotshana ngokufafaza futhi wathola ukuthi ukuzwela kwenzwa kwakuphakeme kuphela kunokwenzwa esekelwe ku-NiO, kodwa kuphansi kunaleyo yenzwa esekelwe ku-SnO2.inzwa.Lesi simo sibangelwa ukuthi i-SnO2 ne-NiO zibonisa ukusabela okuphambene ne-NO276.Futhi, ngenxa yokuthi lezi zingxenye ezimbili zinokuzwela okuhlukile kwegesi, zingase zibe nokuthambekela okufanayo kokuthola i-oxidizing kanye nokunciphisa amagesi.Isibonelo, u-Kwon et al.I-157 ihlongoze inzwa yegesi ye-NiO/SnO2 pn-heterojunction nge-oblique sputtering, njengoba kuboniswe ku-Fig. 9a.Kuyathakazelisa ukuthi inzwa ye-NiO/SnO2 pn-heterojunction ibonise umkhuba ofanayo wokuzwela we-H2 no-NO2 (Fig. 9a).Ukuxazulula lo mphumela, u-Kwon et al.157 iphenye ngokuhlelekile ukuthi i-NO2 ne-H2 ikushintsha kanjani ukugxilisa kwenkampani yenethiwekhi futhi yashunwa \(V_{bi}^0\) yazo zombili izinto kusetshenziswa izici ze-IV nezifaniso zekhompyutha (Fig. 9bd).Izibalo 9b kanye no-c zibonisa ikhono le-H2 ne-NO2 lokushintsha ukuminyana kwenkampani yenethiwekhi yezinzwa ezisekelwe ku-p-NiO (pp0) kanye ne-n-SnO2 (nn0), ngokulandelanayo.Babonisa ukuthi i-pp0 ye-p-type NiO yashintsha kancane endaweni ye-NO2, kuyilapho ishintshe kakhulu endaweni ye-H2 (Fig. 9b).Nokho, ohlotsheni lwe-n-SnO2, i-nn0 iziphatha ngendlela ephambene (Fig. 9c).Ngokusekelwe kule miphumela, ababhali baphetha ngokuthi lapho i-H2 isetshenziswa kunzwa esekelwe ku-NiO/SnO2 pn heterojunction, ukwanda kwe-nn0 kuholele ekwenyukeni kwe-Jn, futhi \(V_{bi}^0\) kuholele ekutheni ukwehla kwempendulo (Fig. 9d).Ngemuva kokuchayeka ku-NO2, kokubili ukwehla okukhulu kwe-nn0 ku-SnO2 kanye nokwenyuka okuncane kwe-pp0 ku-NiO kuholela ekunciphiseni okukhulu ku-\(V_{bi}^0\), okuqinisekisa ukwanda kokuphendula kwezinzwa (Fig. 9d ) 157 Ekuphetheni, izinguquko ekugxiliseni kwezinkampani zenethiwekhi kanye \(V_{bi}^0\) ziholela ekushintsheni kwengqikithi yamanje, okuphinde kuthinte ikhono lokuthola.
Indlela yokuzwa yenzwa yegesi isekelwe esakhiweni sedivayisi yohlobo lwe-III.Iskena i-electron microscopy (SEM) izithombe eziphambanayo, i-p-NiO/n-SnO2 idivayisi ye-nanocoil kanye nezimpawu zenzwa ye-p-NiO/n-SnO2 inzwa ye-nanocoil heterojunction engu-200°C ye-H2 ne-NO2;b , i-SEM yezingxenye ezihlukene zedivayisi ye-c, kanye nemiphumela yokulingisa yedivayisi ene-p-NiO b-layer kanye ne-n-SnO2 c-layer.Inzwa ye-b p-NiO kanye nenzwa ye-c n-SnO2 futhi ifanisa izici ze-I–V emoyeni owomile nangemva kokuchayeka ku-H2 ne-NO2.Imephu enezinhlangothi ezimbili yokuminyana kwe-b-hole ku-p-NiO kanye nemephu yama-c-electron isendlalelo se-n-SnO2 enesilinganiso sombala kwenziwe imodeli kusetshenziswa isofthiwe ye-Sentaurus TCAD.d Imiphumela yokulingisa ebonisa imephu ye-3D ye-p-NiO/n-SnO2 emoyeni owomile, i-H2 ne-NO2157 endaweni.
Ngaphandle kwezakhiwo zamakhemikhali zezinto ngokwazo, ukwakheka kwedivayisi yohlobo lwe-III kubonisa ukuthi kungenzeka ukudala izinzwa zegesi ezizisebenzelayo, okungenakwenzeka nge-Type I kanye namadivayisi we-Type II.Ngenxa yenkambu yazo kagesi engokwemvelo (BEF), izakhiwo ze-pn heterojunction diode zivame ukusetshenziselwa ukwakha amadivaysi e-photovoltaic futhi zibonise amandla okwenza izinzwa zegesi ye-photoelectric ezisebenza ngokuzihambela ekamelweni lokushisa ngaphansi kokukhanya74,158,159,160,161.I-BEF ku-heterointerface, ebangelwa umehluko kumazinga we-Fermi wezinto zokwakha, iphinde ibe negalelo ekuhlukaniseni amapheya e-electron-hole.Inzuzo ye-self-powered photovoltaic gas sensor ukusetshenziswa kwayo okuphansi kwamandla njengoba ingakwazi ukudonsa amandla okukhanya okukhanyisayo bese izilawula yona noma amanye amadivaysi amancane ngaphandle kwesidingo somthombo wamandla wangaphandle.Isibonelo, i-Tanuma ne-Sugiyama162 yenze ama-heterojunctions e-NiO/ZnO pn njengamaseli elanga ukuze enze izinzwa ze-SnO2 ezisekelwe ku-polycrystalline CO2 zisebenze.UGad et al.I-74 ibike inzwa yegesi ye-photovoltaic ene-self-powered esekelwe ku-Si/ZnO@CdS pn heterojunction, njengoba kuboniswe ku-Fig. 10a.Ama-nanowires e-ZnO aqonde mpo akhuliswe ngokuqondile kuma-silicon substrates ohlobo lwe-p ukuze akhe i-Si/ZnO pn heterojunctions.Khona-ke ama-nanoparticles e-CdS ashintshwa ebusweni be-ZnO nanowires ngokuguqulwa kwendawo yamakhemikhali.Emkhiwaneni.I-10a ibonisa imiphumela yenzwa ye-Si/ZnO@CdS engaxhunyiwe ku-inthanethi ye-O2 ne-ethanol.Ngaphansi kokukhanya, i-voltage ye-open-circuit (Voc) ngenxa yokuhlukaniswa kwamapheya e-electron-hole ngesikhathi se-BEP ku-Si/ZnO heterointerface inyuka ngokuhambisana nenani lama-diode axhunyiwe74,161.I-Voc ingamelwa yi-equation.(5) 156,
lapho i-ND, NA, kanye ne-Ni kuwukugxilisana kwabanikeli, abamukeli, nabathwali bangaphakathi, ngokulandelana, kanye no-k, T, kanye no-q kuyimingcele efanayo njengakwisibalo sangaphambilini.Uma echayeke kumagesi e-oxidizing, akhipha ama-electron ku-ZnO nanowires, okuholela ekwehleni kokuthi \(N_D^{ZnO}\) ne-Voc.Ngokuphambene, ukunciphisa igesi kubangele ukwanda kwe-Voc (Fig. 10a).Lapho uhlobisa i-ZnO ngama-nanoparticles e-CdS, ama-electron e-photoexcited kuma-nanoparticles e-CdS ajovwa ebhendini yokuqhuba ye-ZnO futhi ahlanganyele negesi ekhangisiwe, ngaleyo ndlela andise ukusebenza kahle kokubona74,160.Inzwa efana ne-self-powered photovoltaic gas esekelwe ku-Si / ZnO yabikwa nguHoffmann et al.160, 161 (Fig. 10b).Le nzwa ingalungiswa kusetshenziswa umugqa we-amine-functionalized ZnO nanoparticles ([3-(2-aminoethylamino)propyl]trimethoxysilane) (amino-functionalized-SAM) kanye ne-thiol ((3-mercaptopropyl) -functionalized, ukulungisa umsebenzi yegesi okuhloswe ngayo ukutholwa okukhethiwe kwe-NO2 (trimethoxysilane) (thiol-functionalized-SAM)) (Fig. 10b) 74,161.
Inzwa yegesi yezithombe ezisebenza ngogesi esekelwe esakhiweni sedivayisi yohlobo lwe-III.inzwa yegesi ye-photovoltaic ene-self-powered esekelwe ku-Si/ZnO@CdS, indlela yokuzizwela ene-self-powered kanye nokusabela kwenzwa ku-oxidized (O2) namagesi ancishisiwe (1000 ppm ethanol) ngaphansi kokukhanya kwelanga;I-74b Self-powered photovoltaic gas sensor esekelwe kuzinzwa ze-Si ZnO/ZnO kanye nezimpendulo zezinzwa kumagesi ahlukahlukene ngemva kokusebenza kwe-ZnO SAM enama-terminal amines nama-thiols 161
Ngakho-ke, lapho kuxoxwa ngomshini obucayi wezinzwa zohlobo lwe-III, kubalulekile ukunquma ushintsho ekuphakameni kwesithiyo se-heterojunction kanye nekhono legesi ukuthonya ukuhlushwa kwenkampani yenethiwekhi.Ngaphezu kwalokho, ukukhanya kungakhiqiza izithwali ezenza izithombe ezisabela ngamagesi, okuthembisa ukutholwa kwegesi ezisebenza yona.
Njengoba kuxoxwe ngakho kulokhu kubuyekezwa kwezincwadi, i-MOS heteronanostructures eminingi ehlukene yenziwe ukuze kuthuthukiswe ukusebenza kwezinzwa.Isizindalwazi seWebhu yeSayensi saseshwa ukuze kutholwe amagama angukhiye ahlukahlukene (izinhlanganisela ze-metal oxide, i-core-sheath metal oxides, ama-oxide ensimbi agqitshwayo, nezihlaziyi zegesi ezizisebenza ngamandla) kanye nezici ezihlukile (ubuningi, ukuzwela/ukuzikhethela, amandla okukhiqiza amandla, ukukhiqiza) .Indlela Izimpawu zalawa madivaysi amathathu ziboniswa kuThebula 2. Umqondo ophelele wokuklama wezinzwa zegesi ezisebenza kahle uxoxwa ngokuhlaziya izici ezintathu ezibalulekile ezihlongozwe i-Yamazoe.Izindlela Zezinzwa Ze-MOS Heterostructure Ukuze uqonde izici ezithonya izinzwa zegesi, imingcele ehlukahlukene ye-MOS (isb, usayizi wokusanhlamvu, izinga lokushisa lokusebenza, ukukhubazeka kanye nokuminyana kwezikhala zokwenza umoya-mpilo, izindiza zekristalu ezivulekile) ziye zacutshungulwa ngokucophelela.Isakhiwo sedivayisi, esibalulekile ekuziphatheni kwezinzwa zenzwa, siye sanganakwa futhi akuvamile ukuxoxwa ngaso.Lokhu kubuyekezwa kudingida izindlela eziyisisekelo zokuthola izinhlobo ezintathu ezijwayelekile zokwakheka kwedivayisi.
Isakhiwo sikasayizi wokusanhlamvu, indlela yokukhiqiza, kanye nenani lama-heterojunctions enzwa yenzwa yohlobo I kungathinta kakhulu ukuzwela kwenzwa.Ngaphezu kwalokho, ukuziphatha kwenzwa kuphinde kuthinteke isilinganiso se-molar yezingxenye.Izakhiwo zedivayisi yohlobo lwe-II (i-heteronanostructures yokuhlobisa, amafilimu e-bilayer noma ama-multilayer, ama-HSSN) yizakhiwo zedivayisi ezidume kakhulu ezihlanganisa izingxenye ezimbili noma ngaphezulu, futhi ingxenye eyodwa kuphela exhunywe ku-electrode.Kulesi sakhiwo sedivayisi, ukucacisa indawo yamashaneli okuqhuba kanye nezinguquko ezihambisanayo kubalulekile ekutadisheni indlela yokubona.Ngenxa yokuthi amadivayisi ohlobo lwe-II ahlanganisa i-hierarchical heteronanostructures eminingi ehlukene, kuhlongozwe izindlela eziningi zokuzwa ezihlukene.Kuhlobo lwesakhiwo sezinzwa ze-III, isiteshi sokuqhuba silawulwa yi-heterojunction eyakhiwe ku-heterojunction, futhi indlela yokubona ihluke ngokuphelele.Ngakho-ke, kubalulekile ukunquma ushintsho ekuphakameni kwesithiyo se-heterojunction ngemva kokuchayeka kwegesi eliqondiwe kuhlobo lwe-III inzwa.Ngalo mklamo, izinzwa zegesi ye-photovoltaic ezizisebenzelayo zingenziwa ukuze kuncishiswe ukusetshenziswa kwamandla.Kodwa-ke, njengoba inqubo yamanje yokwenziwa iyinkimbinkimbi futhi ukuzwela kuphansi kakhulu kunezinzwa zegesi ezimelana ne-chemo ezisekelwe ku-MOS, kusenenqubekelaphambili enkulu ocwaningweni lwezinzwa zegesi ezizishayelayo.
Izinzuzo eziyinhloko zezinzwa ze-MOS zegesi ezinama-hierarchical heteronanostructures ijubane nokuzwela okuphezulu.Nokho, ezinye izinkinga eziyinhloko zezinzwa zegesi ye-MOS (isb., izinga lokushisa eliphezulu lokusebenza, ukuzinza kwesikhathi eside, ukukhetha okungalungile nokukhiqizwa kabusha, imiphumela yomswakama, njll.) zisekhona futhi zidinga ukubhekwana nazo ngaphambi kokuba zisetshenziswe ezinhlelweni zokusebenza.Izinzwa zegesi yesimanje ye-MOS ngokuvamile zisebenza emazingeni okushisa aphezulu futhi zisebenzisa amandla amaningi, okuthinta ukuzinza kwesikhathi eside kwenzwa.Kunezindlela ezimbili ezivamile zokuxazulula le nkinga: (1) ukuthuthukiswa kwama-chips wezinzwa zamandla aphansi;(2) ukuthuthukiswa kwezinto ezintsha ezizwelayo ezingasebenza ezingeni lokushisa eliphansi noma ngisho nasezingeni lokushisa elivamile.Enye indlela yokuthuthukiswa kwezinzwa zenzwa yamandla aphansi ukunciphisa usayizi wenzwa ngokwenza amapuleti ashisisayo asuselwe kuma-ceramics ne-silicon163.Amapuleti okushisisa asuselwa kuceramic adla cishe u-50–70 mV inzwa ngayinye, kuyilapho amapuleti athuthukisiwe asuselwa ku-silicon angadla kancane njengo-2 mW inzwa ngayinye lapho esebenza ngokuqhubekayo ku-300 °C163,164.Ukuthuthukiswa kwezinto ezintsha zokuzwa kuyindlela ephumelelayo yokunciphisa ukusetshenziswa kwamandla ngokunciphisa izinga lokushisa lokusebenza, futhi kungathuthukisa nokuzinza kwezinzwa.Njengoba ubukhulu be-MOS buqhubeka buncishiswa ukuze kwandiswe ukuzwela kwenzwa, ukuzinza okushisayo kwe-MOS kuba yinselele enkulu, okungaholela ekukhukhuleni kusignali yenzwa165.Ngaphezu kwalokho, izinga lokushisa eliphezulu likhuthaza ukusabalalisa kwezinto ezibonakalayo ku-heterointerface kanye nokwakhiwa kwezigaba ezixubile, ezithinta izakhiwo ze-elekthronikhi zenzwa.Abacwaningi babika ukuthi izinga lokushisa eliphezulu lokusebenza kwenzwa lingancishiswa ngokukhetha izinto zokuzwa ezifanele nokuthuthukisa ama-MOS heteronanostructures.Ukusesha indlela yezinga lokushisa eliphansi lokwakha ama-heteronanostructures e-MOS acwebe kakhulu kungenye indlela ethembisayo yokuthuthukisa ukuzinza.
Ukukhethwa kwezinzwa ze-MOS kungenye indaba engokoqobo njengoba amagesi ahlukene ehlala ndawonye negesi eqondiwe, kuyilapho izinzwa ze-MOS zivame ukuzwela kumagesi angaphezu kweyodwa futhi ngokuvamile zibonisa ukuzwela okuphambene.Ngakho-ke, ukukhulisa ukukhetha kwenzwa kugesi eliqondiwe kanye nakwamanye amagesi kubalulekile ekusebenzeni okungokoqobo.Emashumini ambalwa eminyaka adlule, ukukhetha kuye kwasingathwa ngokwengxenye ngokwakha izinhlu zezinzwa zegesi ezibizwa ngokuthi “amakhala e-electronic (E-nose)” kuhlanganiswe nama-algorithms okuhlaziya okwenziwa ngekhompyutha afana nokuqeqeshwa kwe-vector quantization (LVQ), ukuhlaziywa kwengxenye eyinhloko (PCA), njll. e.Izinkinga zocansi.Izikwele Ezincane Ezincane (PLS), njll. 31, 32, 33, 34. Izici ezimbili eziyinhloko (inani lezinzwa, ezisondelene kakhulu nohlobo lwezinto ezizwayo, nokuhlaziywa kwekhompyutha) zibalulekile ekuthuthukiseni ikhono lamakhala kagesi. ukuhlonza amagesi169.Kodwa-ke, ukwandisa inani lezinzwa ngokuvamile kudinga izinqubo eziningi zokukhiqiza eziyinkimbinkimbi, ngakho-ke kubalulekile ukuthola indlela elula yokuthuthukisa ukusebenza kwamakhala kagesi.Ngaphezu kwalokho, ukulungisa i-MOS ngezinye izinto kungandisa nokukhethwa kwenzwa.Isibonelo, ukutholwa okukhethiwe kwe-H2 kungafinyelelwa ngenxa yomsebenzi omuhle we-catalytic we-MOS oshintshwe nge-NP Pd.Eminyakeni yamuva nje, abanye abacwaningi baye bahlanganisa indawo ye-MOS MOF ukuze bathuthukise ukukhetha kwezinzwa ngokukhishwa kosayizi171,172.Ngokugqugquzelwa yilo msebenzi, ukusebenza kwezinto ezibonakalayo kungaxazulula ngandlela thile inkinga yokukhetha.Nokho, usemkhulu umsebenzi okufanele wenziwe ekukhetheni impahla efanele.
Ukuphindaphinda kwezimpawu zezinzwa ezikhiqizwa ngaphansi kwezimo nezindlela ezifanayo kungenye imfuneko ebalulekile yokukhiqiza okukhulu kanye nokusetshenziswa okusebenzayo.Ngokuvamile, izindlela ze-centrifugation nezindlela zokucwilisa izindlela ezingabizi kakhulu zokwenza izinzwa zegesi yokuphuma okuphezulu.Kodwa-ke, phakathi nalezi zinqubo, okubalulekile okuzwelayo kuvame ukuhlanganisa futhi ubudlelwano phakathi kwezinto ezizwelayo kanye ne-substrate iba buthaka68, 138, 168. Ngenxa yalokho, ukuzwela nokuzinza kwenzwa kuwohloka kakhulu, futhi ukusebenza kuba okuphindaphindekayo.Ezinye izindlela zokwenziwa ezifana ne-sputtering, i-ALD, i-pulsed laser deposition (PLD), kanye ne-physical vapor deposition (PVD) zivumela ukukhiqizwa kwamafilimu e-bilayer noma ama-multilayer MOS ngokuqondile ku-silicon enephethini noma ama-alumina substrates.Lawa masu agwema ukunqwabelana kwezinto ezizwelayo, aqinisekise ukukhiqizwa kabusha kwezinzwa, futhi abonise ukuba nokwenzeka kokukhiqizwa ngezinga elikhulu kwezinzwa zefilimu elincanyana.Kodwa-ke, ukuzwela kwalawa mafilimu ayisicaba ngokuvamile kuphansi kakhulu kunokwezinto ze-3D nanostructured ngenxa yendawo yazo encane ethize kanye nokufinyeleleka kwegesi okuphansi41,174.Amasu amasha okukhulisa ama-heteronanostructures e-MOS ezindaweni ezithile kuma-microarray ahlelekile kanye nokulawula ngokunembile usayizi, ukujiya, kanye nokumila kwezinto ezibucayi abalulekile ekwenziweni kwezindleko eziphansi zezinzwa zeleveli ye-wafer ezinokuphindaphindeka okuphezulu nokuzwela.Ngokwesibonelo, uLiu et al.I-174 ihlongoze isu elihlangene lokusuka phansi neliphansi lokwakha amakristalu aphuma phambili ngokukhula ku-situ Ni(OH)2 nanowalls ezindaweni ezithile..Ama-wafers ama-microburners.
Ngaphezu kwalokho, kubalulekile ukucabangela umphumela womswakama kwinzwa ekusebenzeni okungokoqobo.Ama-molecule wamanzi angaqhudelana nama-molecule omoya-mpilo kumasayithi okukhangisa ezintweni zenzwa futhi athinte umthwalo wenzwa wegesi eqondiwe.Njengomoya-mpilo, amanzi asebenza njenge-molecule ngokusebenzisa i-sorption ebonakalayo, futhi angaba khona ngendlela yama-hydroxyl radicals noma amaqembu e-hydroxyl eziteshini ezihlukahlukene ze-oxidation ngokusebenzisa i-chemisorption.Ngaphezu kwalokho, ngenxa yezinga eliphezulu kanye nomswakama oguquguqukayo wemvelo, impendulo ethembekile yenzwa kugesi okuhlosiwe kuyinkinga enkulu.Kuye kwasungulwa amasu amaningana okubhekana nale nkinga, njengokugxilwa kwegesi kuqala177, isinxephezelo somswakama kanye nezindlela ze-lattice ezisebenzayo178, kanye nezindlela zokomisa179,180.Kodwa-ke, lezi zindlela ziyabiza, ziyinkimbinkimbi, futhi zinciphisa ukuzwela kwenzwa.Kuye kwahlongozwa amasu amaningana ashibhile okucindezela imiphumela yomswakama.Isibonelo, ukuhlobisa i-SnO2 nge-Pd nanoparticles kungakhuthaza ukuguqulwa kwe-oksijini ye-adsorbed ibe yizinhlayiya ze-anionic, kuyilapho i-SnO2 isebenza ngezinto ezinobungane obuphezulu bama-molecule amanzi, njenge-NiO ne-CuO, izindlela ezimbili zokuvimbela ukuncika komswakama kuma-molecule wamanzi..Izinzwa 181, 182, 183. Ngaphezu kwalokho, umphumela womswakama ungabuye uncishiswe ngokusebenzisa izinto ze-hydrophobic ukwakha izindawo ze-hydrophobic36,138,184,185.Nokho, ukuthuthukiswa kwezinzwa zegesi ezikwazi ukumelana nomswakama kusesesigabeni sokuqala, futhi kudingeka amasu athuthuke kakhulu ukuze kubhekwane nalezi zinkinga.
Sengiphetha, ukuthuthukiswa kokusebenza kokuthola (isb, ukuzwela, ukukhetha, izinga lokushisa eliphansi elisezingeni eliphezulu) kufinyelelwe ngokudala ama-MOS heteronanostructures, futhi kuhlongoziwe izindlela ezihlukahlukene zokubona ezithuthukisiwe.Lapho ufunda indlela yokuzwa yenzwa ethile, ukwakheka kwejometri yedivayisi kufanele futhi kucatshangelwe.Ucwaningo lwezinto ezintsha zokuzwa kanye nocwaningo lwamasu okwenziwa okuthuthukile kuzodingeka ukuze kuthuthukiswe ukusebenza kwezinzwa zegesi nokubhekana nezinselele ezisele esikhathini esizayo.Ngokulungiswa okulawulwayo kwezici zenzwa, kuyadingeka ukwakha ngokuhlelekile ubudlelwano phakathi kwendlela yokwenziwa yezinto zenzwa kanye nomsebenzi we-heteronanostructures.Ukwengeza, ukucwaninga kokusabela kwendawo kanye nezinguquko kuma-heterointerfaces kusetshenziswa izindlela zesimanje zokubonisa abalingisi kungasiza ukucacisa izindlela zokubona kwabo futhi kunikeze izincomo zokuthuthukiswa kwezinzwa ezisekelwe ezintweni ezine-heteronanostructured.Okokugcina, ukucwaninga kwamasu esimanje okwenziwa kwezinzwa kungase kuvumele ukwenziwa kwezinzwa zegesi ezincane ezingeni le-wafer ukuze zisetshenziswe ezimbonini.
Genzel, NN et al.Ucwaningo lwesikhathi eside lwamazinga e-nitrogen dioxide angaphakathi nezimpawu zokuphefumula ezinganeni ezinesifuba somoya ezindaweni zasemadolobheni.umakhelwane.Umbono wezempilo.116, 1428–1432 (2008).
Isikhathi sokuthumela: Nov-04-2022
